Rzhanov Institute of Semiconductor Physics of the Siberian Branch of the RAS

Rzhanov Institute of Semiconductor Physics of the Siberian Branch of the RAS

Rzhanov Institute of Semiconductor Physics of the Siberian Branch of the RAS
Rzhanov Institute of Semiconductor Physics of the Siberian Branch of the RAS
Rzhanov Institute of Semiconductor Physics of the Siberian Branch of the RAS
Rzhanov Institute of Semiconductor Physics of the Siberian Branch of the RAS
Rzhanov Institute of Semiconductor Physics of the Siberian Branch of the RAS, Novosibirsk, Russia
Rzhanov Institute of Semiconductor Physics of the Siberian Branch of the RAS
Rzhanov Institute of Semiconductor Physics of the Siberian Branch of the RAS
Rzhanov Institute of Semiconductor Physics of the Siberian Branch of the RAS
Rzhanov Institute of Semiconductor Physics of the Siberian Branch of the RAS
Rzhanov Institute of Semiconductor Physics of the Siberian Branch of the RAS
При содействии ИФП СО РАН 19 мая 2017 г. в НГУ прошла лекция академика РАН, председателя Совета директоров, генерального конструктора ПАО «Микрон», генерального директора АО «НИИМЭ» Красникова Геннадия Яковлевича «Транзисторные характеристики в современной микроэлектронике».
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